0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1. gate 2. source 3. drain features v ds (v) = 30v i d =4a r ds(on) 55m (v gs = 10v) r ds(on) 70m (v gs =4.5v) r ds(on) 110m (v gs =2.5v) KO3402 (ao3402) absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v continuous drain current ta=25 4 ta=70 3.4 pulsed drain current i dm 15 power dissipation ta=25 1.4 ta=70 1 thermal resistance.j unction-to-ambient r ja 125 /w thermal resistance.junction-to-case r jc 80 /w junction and storage temperature range t j ,t stg -55to150 i d p d a w product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type smd type electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v dss i d =250 a, v gs =0v 30 v v ds =24v, v gs =0v 1 v ds =24v, v gs =0v ,tj=55 5 gate-body leakage current i gss v ds =0v, v gs = 12v 100 na gate threshold voltage v gs(th) v ds =v gs i d =250 a 0.6 1 1.4 v v gs =10v, i d =4a 45 55 v gs =10v, i d =4a t j =125 66 80 v gs =4.5v, i d =3a 55 70 m v gs =2.5v, i d =2a 83 110 m on state drain current i d(on) v gs =4.5v, v ds =5v 10 a forward transconductance g fs v ds =5v, i d =4a 8 s input capacitance c iss 390 pf output capacitance c oss 54.5 pf reverse transfer capacitance c rss 41 pf gate resistance r g v gs =0v, v ds =0v, f=1mhz 3 total gate charge q g 4.34 nc gate source charge q gs 0.6 nc gate drain charge q gd 1.38 nc turn-on delaytime t d(on) 3.3 ns turn-on rise time t r 1ns turn-off delaytime t d(off) 21.7 ns turn-off fall time t f 2.1 ns body diode reverse recovery time t rr i f =4a, d i /d t =100a/ s 12 ns body diode reverse recovery charge q rr i f =4a, d i /d t =100a/ s 6.3 nc maximum body-diode continuous current i s 2.5 a diode forward voltage v sd i s =1a,v gs =0v 0.8 1 v v gs =10v, v ds =15v, r l =3.75 ,r gen =6 r ds(on) static drain-source on-resistance i dss zero gate voltage drain current a m v gs =0v, v ds =15v, f=1mhz v gs =4.5v, v ds =15v, i d =-4a KO3402 (ao3402) product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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